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11 June 2003 Investigation of the formation of InAs QDs in a AlGaAs matrix
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Abstract
Optical and structural properties of self organized InGaAs quantum dots (QD), deposited in Al0.3Ga0.7As matrix, were investigated. Samples were grown by molecular-beam epitaxy (MBE). It is shown, that deposition of 1.7 - 4 monolayer of InAs on Al0.3Ga0.7As surface results in formation of nanoscale QDs on 1 - 2 monolayer thick wetting layer (Stranski-Krastanov growth mode). Large exciton localization energy of the InAs QDs in Al0.3Ga0.7As in compare with QDs in GaAs is demonstrated. This is due to increase in size of these QDs and significant bandgap offset in the case of InAs/AlGaAs system in compare with InAs/GaAs one.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. S. Sizov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu B. Samsonenko, G. E. Cirlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkih, Yu G. Musikhin, Anrei F. Tsatsul'nikov, N. N. Ledentsov, and Victor M. Ustinov "Investigation of the formation of InAs QDs in a AlGaAs matrix", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511241
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