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11 June 2003 Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
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The results of optical phenomena investigations in quantum dot and quantum well structures under interband optical pumping are presented. Interband and intraband light absorption in nanostructures with quantum dots has been studied experimentally and theoretically. Photoluminescence and interband light absorption in stepped quantum wells have been investigated including PL studies under picosecond optical pumping. Experimental results have been compared with results of calculation of energy spectrum and transition probabilities. It is shown that inversion of population exists between the third and second excited levels of stepped quantum well.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Ya. Aleshkin, D. M. Gaponova, Dmitry G. Revin, Leonid E. Vorobjev, S. N. Danilov, Vadim Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, Aleksey D. Andreev, Alexey E. Zhukov, N. N. Ledentsov, Victor M. Ustinov, G. E. Cirlin, V. A. Egorov, F. Fossard, Francois H. Julien, Elias Towe, Debdas Pal, S. R. Schmidt, and Alois Seilmeier "Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003);

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