11 June 2003 MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
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Abstract
Recent results on molecular-beam epitaxy growth of the quantum dot InGaAs/GaAs heterostructures for long-wavelength lasers on GaAs substrates are presented. As a result of optimization of the growth procedure for active region and emitter layers low-threshold current density (45 - 80 A/cm2) long-wavelength (1.27 - 1.3 μm) laser diodes may be fabricated with high reproducibility.
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Nikolay A. Maleev, Nikolay A. Maleev, Alexey R. Kovsh, Alexey R. Kovsh, Alexey E. Zhukov, Alexey E. Zhukov, Sergei S. Mikhrin, Sergei S. Mikhrin, A. V. Vasil'ev, A. V. Vasil'ev, E. S. Semenova, E. S. Semenova, Yuri M. Shernyakov, Yuri M. Shernyakov, E. V. Nikitina, E. V. Nikitina, N. V. Kryjanovskaya, N. V. Kryjanovskaya, D. S. Sizov, D. S. Sizov, Ilja P. Soshnikov, Ilja P. Soshnikov, Mikhail V. Maximov, Mikhail V. Maximov, N. N. Ledentsov, N. N. Ledentsov, Victor M. Ustinov, Victor M. Ustinov, Dieter Bimberg, Dieter Bimberg, Zhores I. Alferov, Zhores I. Alferov, } "MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514327; https://doi.org/10.1117/12.514327
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