11 June 2003 Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron threshold
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Abstract
A remarkable change of LO-phonon line for tunneling from metal to 2DEG, in comparison with 3D-case, was observed. It was shown that the line shapes and the amplitudes of LO-phonon and zero-bias anomaly in tunneling spectra of Al/δ-GaAs junctions depended on magnetic field in-plane of the 2DEG. The parameters of the lines were changed when threshold for resonant intersubband polaron in δ-layer was exceeded.
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I. N. Kotel'nikov, S. E. Dizhur, F. V. Shtrom, "Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron threshold", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513913; https://doi.org/10.1117/12.513913
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