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11 June 2003 Operating modes of the Auger-transistor and the photo-field detectors under strong electric field
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Abstract
Conditions for appearance of a self-consistent quantum well in both the near-surface region of a vacuum semi-conductor field-emitter and a case of metal-insulator-semiconductor heterostructures (Auger-transistor) under strong electric field have been studied.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. D. Kalganov, N. V. Mileshkina, and E. V. Ostroumova "Operating modes of the Auger-transistor and the photo-field detectors under strong electric field", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514261
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