11 June 2003 Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators
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InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators based on the quantum confined Stark effect were studied in order to find the most efficient one for optical communication at 1.55 μm. Parameters such as contrast ratio, polarization sensitivity, operation voltage and chirp are determined for structures with different InGaAs composition and thickness. Simulations of the devices' performance are carried out and are in good agreement with experiment.
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Maurico Pamplona Pires, Maurico Pamplona Pires, Christiana V.-B. Tribuzy, Christiana V.-B. Tribuzy, Boris Yavich, Boris Yavich, P. L. Souza, P. L. Souza, } "Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514281; https://doi.org/10.1117/12.514281

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