11 June 2003 Pore sealing during epitaxy and annealing on Si(001) surface
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Abstract
Using 3D Monte Carlo model evolution of Si(001) surface during epitaxy and high temperature annealing was investigated. The surface relief in the form of pyramidal pits is developed in the wide range of deposition rate. This relief prevents simultaneous creation of flat surface and thin solid layer formation over pores on Si(001) surface. Critical dose on (001) surface at the same deposition rates and temperatures was found to be an order of magnitude larger than on (111) surface.
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A. V. Chemakin, A. V. Chemakin, I. G. Neizvestny, I. G. Neizvestny, Natalia L. Shwartz, Natalia L. Shwartz, Zoja Sh. Yanovitskaya, Zoja Sh. Yanovitskaya, Alexej V. Zverev, Alexej V. Zverev, "Pore sealing during epitaxy and annealing on Si(001) surface", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510519; https://doi.org/10.1117/12.510519
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