11 June 2003 Production scale MOVPE reactors for electronic and optoelectronic applications
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Abstract
In this letter a number of latest results from the process development on AIXTRON production scale MOVPE reactors will be reported. Growth of GaN on alternative substrates has been examined. Up to 900 nm crack free GaN layer were deposited on Si using a double nucleation interfacing technique. Low yellow band vs. band-edge related photoluminescence emission ratios have been observed and sheet resistances of up to 3500 Ω have been achieved on 2" Si substrates. Also, first results are reported of the up-scaling of the Planetary Reactor to 24 x 2". First results from fully loaded runs show an average 2" on wafer peak wavelength standard deviation of 3.8 nm, average wafer to wafer standard deviation across all wafers of 2.0 nm and average 3 x 2" disk to disk standard deviation of 1.6 nm at an average wavelength of 477.9 nm across all wafers (evaluated with peak integration and 2 mm edge exclusion for the 2" wafers). Photoluminescence peak intensity (area) varied with 13.6% standard deviation wafer to wafer and 12.8% disk to disk. On wafer intensity deviation was 11.3%.
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Harry Protzmann, Georg Gerstenbrandt, Assadullah Alam, Oliver Schoen, Markus Luenenbuerger, Yilmaz Dikme, Holger Kalisch, Rolf H. Jansen, Michael Heuken, "Production scale MOVPE reactors for electronic and optoelectronic applications", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511364; https://doi.org/10.1117/12.511364
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