11 June 2003 Resonant acceptor states in delta-doped SiGe nanostructures
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Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003); doi: 10.1117/12.514450
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Resonant acceptor states induced by internal strain in Si/SiGe/Si quantum wells delta-doped with boron have been investigated theoretically. Sample design of Si/SiGe/Si MQW structures for resonant state THz laser is suggested.
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A. A. Prokofiev, M. A. Odnoblyudov, Irina N. Yassievich, K. A. Chao, "Resonant acceptor states in delta-doped SiGe nanostructures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514450; https://doi.org/10.1117/12.514450
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KEYWORDS
Quantum wells

Boron

Terahertz radiation

Laser scattering

Nanostructures

Quantum cascade lasers

Scattering

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