11 June 2003 Resonant states of carbon acceptor in p-InGaAs/GaAs-doped quantum well heterostructure
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Abstract
The photocurrent spectra in 27 - 37 μm wavelength range of the InGaAs/GaAs heterostructure with carbon δ-doping on the edge of the quantum wells has been investigated using free electron laser (FELIX). The resonant response has been revealed at the wavelength 34.3 μm. The energy of observed photocurrent peak (approximately 36.2 meV) is in a good agreement with the calculated energy of the hole transition from the ground state to the first excited resonant state of the impurity. The hole relaxation time to the acceptor ground state is estimated.
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D. M. Gaponova, Vladimir Ya. Aleshkin, Vladimir I. Gavrilenko, D. V. Kozlov, V. N. Shastin, R. Kh. Zhukavin, B. N. Zvonkov, E. A. Uskova, J. Niels Hovenier, Alexander F. G. van der Meer, "Resonant states of carbon acceptor in p-InGaAs/GaAs-doped quantum well heterostructure", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513756; https://doi.org/10.1117/12.513756
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