11 June 2003 SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηist about 100%
Author Affiliations +
Abstract
InGaAsP/InP SC DHS lasers with different waveguide design were fabricated and studied. Extremely high values of internal quantum efficiency of stimulated emission ηist about 97% was demonstrated experimentally in structures with step-like waveguide design which is related to lowest leakage currents above threshold and reduced threshold carriers concentration. Theoretically was shown, that it is possible to create lasers emitting at λ = 1.5 μm, with an internal quantum efficiency of stimulated emission close to 100%. ηist for structure with different waveguide design was calculated and prove to be in good agreement with experimental data.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilya S. Tarasov, Ilya S. Tarasov, Georgy G. Zegrya, Georgy G. Zegrya, G. V. Skrynnikov, G. V. Skrynnikov, Nikita A. Pikhtin, Nikita A. Pikhtin, S. O. Slipchenko, S. O. Slipchenko, } "SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηist about 100%", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514371; https://doi.org/10.1117/12.514371
PROCEEDINGS
4 PAGES


SHARE
Back to Top