11 June 2003 Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata module
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Abstract
We proposed and analyzed a semiconductor multi-barrier tunneling structure, which is incorporated with a quantum dot layer for a cellular automata logic module. Both in-plane and cross plane directions of tunneling in the self-assembled quantum dot layer were taken into consideration. Nonlinear I-V characteristics as a result of tunneling of a multi-cell system were simulated and used for the modular-logic construction. Elemental units, "AND," "OR" and "EXCHANGE" gate operations where shown. In addition, we demonstrated a set of local transition rules for use in one logic module driven by the edge bias. The stability of the scheme with respect to material structure imperfections is discussed.
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Alexander G. Khitun, S. Hong, Kang Lung Wang, "Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata module", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514475; https://doi.org/10.1117/12.514475
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