11 June 2003 Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor
Author Affiliations +
A possibility of fabricating all-perovskite field effect transistor is shown, which can provide the development of a nonvolatile memory cell with a nondestructive readout of information. A thin (approximately 5 - 10 nm) Sr-doped lantanate cuprate (LSCO) film was used as a transistor channel while a ferroelectric gate insulator was a lead zirconate titanate (PLZT) film of about 100 nm thickness. The modulation of a channel conduction was found in the studied transistors to be approximately 70%, which is an order of magnitude larger than that reported in the world literature.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Grekhov, L. Delimova, I. Liniichuk, D. Mashovets, I. Veselovsky, "Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514253; https://doi.org/10.1117/12.514253

Back to Top