11 June 2003 Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots
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Abstract
We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.
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P. Borri, Wolfgang W. Langbein, S. Schneider, Ulrike Woggon, Roman Sellin, Dongxun Ouyang, Dieter Bimberg, "Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514297; https://doi.org/10.1117/12.514297
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