11 June 2003 The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy
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Abstract
Optical properties of GaAsN/GaAs heterostructures with different N contents grown by molecular-beam epitaxy were investigated. We show that under the certain grows reigmes the optical properties of the GaAsN layers are determined by recombination via localized states which is due to composition fluctuation. An increase in the N concentration leads to increase in composition fluctuation and, correspondingly, to increase in energy of localized states. Thermal annealing reduces nonuniformity distribution of nitrogen atoms. In short-period GaAsN/GaAs superlattice the effects of phase separation can be enhanced.
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N. V. Kryzhanovskaya, N. V. Kryzhanovskaya, A. G. Gladyshev, A. G. Gladyshev, D. S. Sizov, D. S. Sizov, Alexey R. Kovsh, Alexey R. Kovsh, Anrei F. Tsatsul'nikov, Anrei F. Tsatsul'nikov, Jim Y. Chi, Jim Y. Chi, Jyh-Shyang Wang, Jyh-Shyang Wang, Li-Chung Wei, Li-Chung Wei, Victor M. Ustinov, Victor M. Ustinov, } "The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510522; https://doi.org/10.1117/12.510522
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