Translator Disclaimer
11 June 2003 Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces
Author Affiliations +
Abstract
Variations in the lattice constant of Ge film were determined by RHEED in the course of the MBE film growth on the silicon surface. Oscillations of the in-plane atomic cell constant were observed for the Ge film growing according to the 2D mechanism. Variations in the two-dimensional lattice constant at the stage of 2D growth are caused by elastic deformation of edges of two-dimensional islands. It was shown that the germanium film growth on silica, unlike the growth on the pure silicon surface, proceeds without formation of the wetting layer.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander I. Nikiforov, V. A. Cherepanov, and Oleg P. Pchelyakov "Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510552
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top