Influence of high excitation on excitonic states in GaN/AlGaN quantum wells

D. K. Nelson; M. A. Jacobson; Nicolas Grandjean; J. Massies; P. Bigenwald; Alexey V. Kavokin

doi:10.1117/12.511535

11 June 2003 Influence of high excitation on excitonic states in GaN/AlGaN quantum wells

D. K. Nelson, M. A. Jacobson, Nicolas Grandjean, J. Massies, P. Bigenwald, Alexey V. Kavokin

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.511535
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Photoluminescence of GaN/AlGaN quantum well structures was studied under high intensity of excitation. The blue shift of photoluminescence peak energy was observed when excitation intensity increased. The blue shift was most prominent for the wide wells, becoming smaller with decreasing the well width. We attribute the observed effect to the screening of the built-in electric field by photoexcited carriers, which leads to reducing of the initial red shift caused by the quantum confined Stark effect. The variation of exciton binding energy with carrier concentration also makes the contribution to the blue shift. The theoretical calculations of the blue shift were performed and compared with experimental data.

Citation Download Citation

D. K. Nelson, M. A. Jacobson, Nicolas Grandjean, J. Massies, P. Bigenwald, and Alexey V. Kavokin "Influence of high excitation on excitonic states in GaN/AlGaN quantum wells", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511535

ACCESS THE FULL ARTICLE