Laser spectroscopy of silicon quantum materials

Yoshihiko Kanemitsu

doi:10.1117/12.497304

1 April 2003 Laser spectroscopy of silicon quantum materials

Yoshihiko Kanemitsu

Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497304
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation

Abstract

Optical properties and electronic structures of silicon quantum materials are reviewed. Crystalline silicon (c-Si) and amorphous silicon (a-Si) based zero-dimensional (0D) nanoparticles and two-dimensional (2D) quantum-wells were prepared and their photoluminescence (PL) properties were studied by means of resonant excitation spectroscopy. The PL peak energies of c-Si and a-Si nanoparticles and quantum wells are blueshifted from those of bulk c-Si and a-Si. TO-phonon related structures appear in resonantly excited luminescence spectra of H-passivated c-Si and a-Si nanoparticles. This indicates that visible luminescence is due to excitons confined in the interior c-Si and a-Si states. In SiO₂-passivated c-Si and a-Si nanoparticles, fine structures due to Si-O-Si vibrations appear in resonant luminescence spectra. In 0D Si/SiO₂ systems, excitons are localized at the interface between the Si interior and surface SiO₂ layer. In 2D Si/SiO₂ systems, both excitons confined in the Si well and excitons localized at the Si-SiO₂ interface determine PL properties. The electronic structures and luminescence properties of Si nanostructures are discussed.

Citation Download Citation

Yoshihiko Kanemitsu "Laser spectroscopy of silicon quantum materials", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); https://doi.org/10.1117/12.497304

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