1 April 2003 Optical properties and photoinduced effects in Ge-As-Se films and two-layer systems on their basis
Author Affiliations +
Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497268
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation
Abstract
The optical transmission spectra of the thin GexAsySe100-x-y (0≤ x ≤ 30, 10 ≤ y ≤ 40) films and of two-layer systems on their basis have been studied. Changes of optical parameters (refractive index of films and photosensitivity, contrast coefficient of two-layer systems) induced by laser irradiation on the average coordination number ⟨m⟩ are discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Violetta I. Belozertseva, Violetta I. Belozertseva, V. A. Bazakutsa, V. A. Bazakutsa, S. D. Gapochenko, S. D. Gapochenko, Ye. T. Lemeshevskaya, Ye. T. Lemeshevskaya, V. V. Mussil, V. V. Mussil, } "Optical properties and photoinduced effects in Ge-As-Se films and two-layer systems on their basis", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); doi: 10.1117/12.497268; https://doi.org/10.1117/12.497268
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT


Back to Top