1 April 2003 Study of charge flow mechanisms in metal-porous silicon structures by photoluminescent and electrophysical techniques
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Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497279
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation
Abstract
This article describes the charge injection into porous silicon structures fabricated by electrochemical technique on 20 Ohm cm p-type silicon. The I-V characteristics, photoluminescence spectra and lifetime kinetics studied at temperatures 77 K, 293 K and 373 K. Measurements show that the photoluminescence in porous silicon layers results from the recombination of electrons and holes captured in the potential wells of various depth and shapes; its intensity is controlled by the nonradiative recombination on the wires boundaries. The charge flow in the system Au(Al)-porSi-Si-Al results from the charge transfer in the system metal -- thin insulator -- semiconductor. The current is not restricted by the conductivity of insulating layers; it is restricted by the generation processes in the regions of space charge and semiconductor/insulator interface due to large amount of defects with various ionization energies. Potential barriers on the surface of porous silicon are formed due to surface defects on the interface silicon wire/oxide; their generation tends to shift the surface potential to the intrinsic value.
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G. A. Sukach, G. A. Sukach, Pavel F. Oleksenko, Pavel F. Oleksenko, Petr S. Smertenko, Petr S. Smertenko, A. M. Evstigneev, A. M. Evstigneev, A. B. Bogoslovskaya, A. B. Bogoslovskaya, } "Study of charge flow mechanisms in metal-porous silicon structures by photoluminescent and electrophysical techniques", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); doi: 10.1117/12.497279; https://doi.org/10.1117/12.497279
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