1 April 2003 Orthogonal-projection method for solving equations of diffusion of minority charge carriers generated by the electron beam in semiconductors
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Proceedings Volume 5025, Fifth Seminar on Problems of Theoretical and Applied Electron and Ion Optics; (2003); doi: 10.1117/12.498033
Event: Fifth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2001, Moscow, Russian Federation
Abstract
The results of investigations of some possibilities of numeric-analytical methods application for solving problems of the heat-mass transfer that is concerned with wide kilovolt electron beam with solids interaction processes are reported. The differential equation describing the diffusion of non-equilibrium minority charge carriers generated by electron beam in semiconducotrs is observed. The spectral method using the modified Laguerre's functions based on the mathematical orthogonal projection apparatus is developed for solving this equation.
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A. A. Belov, N. D. Egupov, A. A. Samokhvalov, M. A. Stepovich, M. M. Tchaikovsky, "Orthogonal-projection method for solving equations of diffusion of minority charge carriers generated by the electron beam in semiconductors", Proc. SPIE 5025, Fifth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 April 2003); doi: 10.1117/12.498033; https://doi.org/10.1117/12.498033
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KEYWORDS
Electron beams

Diffusion

Differential equations

Semiconductors

Copper

Solids

Gallium arsenide

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