There has been considerable recent progress in II-IV semiconductor materials and in methods for improving performance of the associated digital x-ray detectors. Cd1-xZnxTe is known as promising medical x-ray detector material. The CdTe and Cd1-xZnxTe (x=0.15,0.25,0.3) detectors were fabricated by vacuum thermal evaporator for the large area deposition. First, the stoichimetric ratio and the x-ray diffraction of the deposited (Cd,Zn)Te films were analyzed by EPMA and XRD. Secondly, leakage current, x-ray sensitivity, SNR, and linearity were measured to analyze the x-ray detection effect of Zn in (Cd,Zn)Te film. Experimental results showed that the increase of Zn concentration rates in Cd1-xZnxTe detectors reduced the leakage current and improved the x-ray detection performance.