8 July 2003 2-W high-brightness semiconductor lasers with Bragg-grating filtering
Author Affiliations +
Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498241
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic
Abstract
We present angled-grating distributed feedback lasers (α-DFB lasers) with high beam quality and high output power of several Watts at the wavelength λ = 1060 nm. The spatial and spectral single mode emission of such lasers is achieved by a filtering mechanism due to repeated Bragg reflections at an angled grating. The influence of slant angle, coupling coefficient, electrode stripe width, length of the resonator, vertical wave guide structure, and facet coating were studied. For optimized structures we obtained a nearly diffraction limited beam with an output power of more than 1 W, a lateral far field divergence angle of 0.3°, a beam quality factor M2 = 1.1 (M2 = 3.2 @ 2.1 W), and a spectral line width less than 5.8 pm with 28 dB side mode suppression ratio.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katrin Paschke, Katrin Paschke, Reiner Guether, Reiner Guether, Joerg Fricke, Joerg Fricke, Juergen Sebastian, Juergen Sebastian, Goetz Erbert, Goetz Erbert, Guenther Traenkle, Guenther Traenkle, } "2-W high-brightness semiconductor lasers with Bragg-grating filtering", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498241; https://doi.org/10.1117/12.498241
PROCEEDINGS
8 PAGES


SHARE
Back to Top