8 July 2003 Double heterojunction bipolar phototransistor model
Author Affiliations +
Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498453
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic
Abstract
An analytical mathematical model of the double heterojunction NpN bipolar phototransistor with abrupt heterojunctions in three terminal configuration is presented. The thermionic-filed emission and diffusion of injected carriers is considered and the Ebers-Moll type relations for the collector and emitter current are obtained. Several steady state characteristics of the phototransistor structure are calculated (optical gain, quantum efficiency, responsivity).
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michal Horak, Michal Horak, } "Double heterojunction bipolar phototransistor model", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498453; https://doi.org/10.1117/12.498453
PROCEEDINGS
6 PAGES


SHARE
Back to Top