8 July 2003 Double heterojunction bipolar phototransistor model
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Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498453
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic
An analytical mathematical model of the double heterojunction NpN bipolar phototransistor with abrupt heterojunctions in three terminal configuration is presented. The thermionic-filed emission and diffusion of injected carriers is considered and the Ebers-Moll type relations for the collector and emitter current are obtained. Several steady state characteristics of the phototransistor structure are calculated (optical gain, quantum efficiency, responsivity).
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Michal Horak, Michal Horak, "Double heterojunction bipolar phototransistor model", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498453; https://doi.org/10.1117/12.498453

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