Erbium localized doping into various cuts of lithium niobate and sapphire: a comparative study

Pavla Nekvindova; Anna Mackova; Vratislav Perina; Jarmila Cervena; Pavel Capek; Josef Schroefel; Jarmila Spirkova; Jiri Oswald

doi:10.1117/12.498640

8 July 2003 Erbium localized doping into various cuts of lithium niobate and sapphire: a comparative study

Pavla Nekvindova, Anna Mackova, Vratislav Perina, Jarmila Cervena, Pavel Capek, Josef Schroefel, Jarmila Spirkova, Jiri Oswald

Author Affiliations +

Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498640
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic

Abstract

Medium temperature (350 °C) localized doping of Er³⁺was studied in lithium niobate (LN) and sapphire single crystal wafers that were cut in various crystallographic directions. It was found that the efficiency of the doping was connected with orientations of the substrate wafers of both LN and sapphire, and with the presence of mobile lithium ions in the structure of LN. The basic interstitial mechanism of erbium incorporation into the structure of sapphire and LN is in the latter accompanied with erbium for lithium ion exchange. While the rate of the interstitial diffusion was higher in the wafers oriented perpendicularly towards the cleavage planes of the crystals, ion exchange process was significant in the wafers cut in cleavage planes. Waveguiding properties in erbium doped lithium niobate originated rather from presence of erbium in the structure of the crystals than being a consequence of a weak proton exchange. Luminescence properties of the fabricated samples are also presented.

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Pavla Nekvindova, Anna Mackova, Vratislav Perina, Jarmila Cervena, Pavel Capek, Josef Schroefel, Jarmila Spirkova, and Jiri Oswald "Erbium localized doping into various cuts of lithium niobate and sapphire: a comparative study", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498640

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