8 July 2003 Photoluminescence scanning near-field optical microscopy of GaAlAs/GaAs quantum wells
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Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498657
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic
Abstract
Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure. The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.
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Dana Kostalova, Lubomir Grmela, Pavel Tomanek, Jitka Bruestlova, "Photoluminescence scanning near-field optical microscopy of GaAlAs/GaAs quantum wells", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498657; https://doi.org/10.1117/12.498657
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