16 June 2003 Advances in Step and Flash imprint lithography
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Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003); doi: 10.1117/12.484985
Event: Microlithography 2003, 2003, Santa Clara, California, United States
Abstract
Recent work on Step and Flash Imprint Lithography (SFIL) has been focused on process and materials fundamentals and demonstration of resolution capability. Etch transfer rpocesses have been developed that are capable of transferring imprinted images though 150 nm of residual etch barrier, yielding sub 50 nm lines with aspect ratios greater than 8:1. A model has been developed for the photoinitiated, free radical curing of the acrylate etch barrier materials that have been used in the SFIL process. This model includes the effects of oxygen transport on the kinetics of the reaction and yields a deeper understanding of the importance of oxygen inhibition, and the resulting impact of that process on throughput and defect generation. This understanding has motivated investigation of etch barrier materials such as vinyl ethers that are cured by a cationic mechanism, which does not exhibit these same effects. Initial work on statistical defect analysis has is reported and it does not reveal pathological trends.
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Stephen C. Johnson, Todd C. Bailey, Michael D. Dickey, Britain J. Smith, Eunha K. Kim, Andrew Thomas Jamieson, Nicholas A. Stacey, John G. Ekerdt, C. Grant Willson, David P. Mancini, William J. Dauksher, Kevin J. Nordquist, Douglas J. Resnick, "Advances in Step and Flash imprint lithography", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484985; https://doi.org/10.1117/12.484985
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KEYWORDS
Etching

Oxygen

Lithography

Polymerization

Silicon

Data modeling

Semiconducting wafers

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