16 June 2003 Calibration of EUV 2D photoresist simulation parameters for accurate predictive modeling
Author Affiliations +
Abstract
In this work simulation parameters are developed for Shipley EUV-2D photoresist under exposure at 13.4nm. Baseline parameter values are determined from theory and experiment. The simulation parameters were tuned from these values using a commercial automatic parameter optimisation software to match simulation results to experimental lithographic data generated using the ETS Set-2 projection optics in the subfield exposure station (SES). In an attempt to maximise parameter accuracy the experimental data set used included 4 different feature sizes and known non-idealities of the exposure set-up were accounted for (mask errors, lens aberrations and metrology bias). The resulting model described the experimental data very well with only a low level of residual error.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stewart A. Robertson, Stewart A. Robertson, Patrick P. Naulleau, Patrick P. Naulleau, Donna J. O'Connell, Donna J. O'Connell, Kevin McDonald, Kevin McDonald, Todd M. Delano, Todd M. Delano, Kenneth A. Goldberg, Kenneth A. Goldberg, Steven G. Hansen, Steven G. Hansen, Kirk W. Brown, Kirk W. Brown, Robert L. Brainard, Robert L. Brainard, } "Calibration of EUV 2D photoresist simulation parameters for accurate predictive modeling", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.499357; https://doi.org/10.1117/12.499357
PROCEEDINGS
10 PAGES


SHARE
Back to Top