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16 June 2003 Candidate plasma-facing materials for EUV lithography source components
Ahmed Hassanein; Tatiana Burtseva; Jeff N. Brooks; Isak K. Konkashbaev; Bryan J. Rice
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Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484928
Event: Microlithography 2003, 2003, Santa Clara, California, United States
Abstract
Material selection and lifetime issues for extreme ultraviolet (EUV) lithography are of critical importance to the success of this technology for commercial applications. This paper reviews current trends in production and use of plasma-facing electrodes, insulators, and wall materials for EUV type sources. Ideal candidate materials should be able to: withstand high thermal shock from the short pulsed plasma; withstand high thermal loads without structural failure; reduce debris generation during discharge; and be machined accurately. We reviewed the literature on current and proposed fusion plasma-facing materials as well as current experience with plasma gun and other simulation devices. Both fusion and EUV source materials involve issues of surface erosion by particle sputtering and heat-induced evaporation/melting. These materials are either bare structural materials or surface coatings. EUV materials can be divided into four categories: wall, electrode, optical, and insulator materials. For electric discharge sources, all four types are required, whereas laser-produced plasma EUV sources do not require electrode and insulator materials. Several types of candidate alloy and other materials and methods of manufacture are recommended for each component of EUV lithography light sources.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Ahmed Hassanein, Tatiana Burtseva, Jeff N. Brooks, Isak K. Konkashbaev, and Bryan J. Rice "Candidate plasma-facing materials for EUV lithography source components", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484928
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