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16 June 2003 Compact electron-based extreme-ultraviolet source at 13.5 nm
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Generation of extreme ultraviolet (EUV) radiation from solid targets is studied and a compact EUV source for small-scale lithographic applications and EUV metrology is development. This source is based on a transfer of conventional x-ray tube technology into the EUV spectral range. As in an ordinary x-ray tube, electrons are generated by a tungesten filament and accelerated in a high-voltage electric field towards a solid target. In the demonstrated "EUV tube" beryllium and silicon targets are used to generate radiation at 11.4 nm and 13.5 nm, respectively. The absolute converstion efficiencies into EUV photons are measured. At 13.5 nm an EUV power of 34μW or 2×1012 photon/s (in 2% bandwidth and a solid angle of 2π sr) is demonstrated. Prospects for a further power scaling of the EUV source are discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Egbert, Bjoern Mader, Boris Tkachenko, Andreas Ostendorf, Boris N. Chichkov, Thomas Missalla, Max Christian Schuermann, Kai Gaebel, Guido Schriever, and Uwe Stamm "Compact electron-based extreme-ultraviolet source at 13.5 nm", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003);


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