Defect repair for extreme-ultraviolet lithography (EUVL) mask blanks

Stefan P. Hau-Riege; Anton Barty; Paul B. Mirkarimi; Daniel Gorman Stearns; Henry N. Chapman; Donald W. Sweeney; W. Miles Clift; Eric Gullikson; Moon-Suk Yi

doi:10.1117/12.484729

16 June 2003 Defect repair for extreme-ultraviolet lithography (EUVL) mask blanks

Stefan P. Hau-Riege, Anton Barty, Paul B. Mirkarimi, Daniel Gorman Stearns, Henry N. Chapman, Donald W. Sweeney, W. Miles Clift, Eric Gullikson, Moon-Suk Yi

Author Affiliations +

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484729
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The development of defect-free reticle blanks is an important challenge facing the commercialization of extreme ultraviolet lithography (EUVL). The basis of an EUVL reticle are mask blanks consisting of a substrate and a reflective Mo/Si multilayer. Defects on the substrate or defects introduced during multilayer deposition can result in critical phase and amplitude defects. Amplitude- or phase-defect repair techniques are being developed with the goal to repair many of these defects. In this paper we discuss the selection of a capping layer for amplitude-defect repair, and report on experimental results of the reflectance variation over the amplitude-defect repair zone for different capping layers. Our results suggest that carbon and silicon carbide are the leading candidates for capping layer materials. We further performed a quantitative assessment of the yield improvement due to defect repair. We found that amplitude- and phase-defect repair have the potential to significantly improve mask blank yield, and that yield can be maximized by increasing the number of Mo/Si bilayers.

Citation Download Citation

Stefan P. Hau-Riege, Anton Barty, Paul B. Mirkarimi, Daniel Gorman Stearns, Henry N. Chapman, Donald W. Sweeney, W. Miles Clift, Eric Gullikson, and Moon-Suk Yi "Defect repair for extreme-ultraviolet lithography (EUVL) mask blanks", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484729

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