Development of Xe-filled capillary discharge extreme-ultraviolet radiation source for semiconductor lithography

Yusuke Teramoto; Hiroto Sato; Kazunori Bessho; Koji Miyauchi; Mitsuru Ikeuchi; Keisuke Okubo; Masaki Yoshioka; Koichi Toyoda

doi:10.1117/12.483704

16 June 2003 Development of Xe-filled capillary discharge extreme-ultraviolet radiation source for semiconductor lithography

Yusuke Teramoto, Hiroto Sato, Kazunori Bessho, Koji Miyauchi, Mitsuru Ikeuchi, Keisuke Okubo, Masaki Yoshioka, Koichi Toyoda

Author Affiliations +

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.483704
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

An EUV radiation source development with discharge-produced plasma (DPP) has been started in Gotenba branch of EUVA Hiratsuka R&D center. For the early stage of the development, fundamental characteristics of DPP including current, voltage, EUV energy and spectrum in EUV region were studied. A capillary of which the inner diameter was 2.3 mm, and Xe gas were used as a source to be expected in-band EUV radiation from magnetically-compressed Z-pinch plasma. An all-solid-state magnetic pulse compression generator was employed, which can deliver the current of 14 kA into the capillary load with the rise time of approximately 500 ns. In-band EUV energy and spectroscopic measurements were carried out. It was found that the in-band EUV energy increased with increasing the current amplitude and/or pressure of filled Xe gas. The highest in-band EUV energy obtained was 8 mJ per unit solid angle.

Citation Download Citation

Yusuke Teramoto, Hiroto Sato, Kazunori Bessho, Koji Miyauchi, Mitsuru Ikeuchi, Keisuke Okubo, Masaki Yoshioka, and Koichi Toyoda "Development of Xe-filled capillary discharge extreme-ultraviolet radiation source for semiconductor lithography", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.483704

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