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16 June 2003 Development of Xe-filled capillary discharge extreme-ultraviolet radiation source for semiconductor lithography
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Abstract
An EUV radiation source development with discharge-produced plasma (DPP) has been started in Gotenba branch of EUVA Hiratsuka R&D center. For the early stage of the development, fundamental characteristics of DPP including current, voltage, EUV energy and spectrum in EUV region were studied. A capillary of which the inner diameter was 2.3 mm, and Xe gas were used as a source to be expected in-band EUV radiation from magnetically-compressed Z-pinch plasma. An all-solid-state magnetic pulse compression generator was employed, which can deliver the current of 14 kA into the capillary load with the rise time of approximately 500 ns. In-band EUV energy and spectroscopic measurements were carried out. It was found that the in-band EUV energy increased with increasing the current amplitude and/or pressure of filled Xe gas. The highest in-band EUV energy obtained was 8 mJ per unit solid angle.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yusuke Teramoto, Hiroto Sato, Kazunori Bessho, Koji Miyauchi, Mitsuru Ikeuchi, Keisuke Okubo, Masaki Yoshioka, and Koichi Toyoda "Development of Xe-filled capillary discharge extreme-ultraviolet radiation source for semiconductor lithography", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.483704
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