16 June 2003 Evaluation of a high-performance chemically amplified resist for EUVL mask fabrication
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Abstract
In this paper, we report on evaluation of a high e-beam sensitive CA resist, FEP171 for EUVL mask fabrication. This resist exhibits a PEB temperature sensitivity of ~1nm/°C and 8.3 nm (3 σ) CD uniformity across an EUVL mask patterned with 200 nm dense features using a 100 keV e-beam exposure system. This resist also showed a very high resolution and excellent exposure latitude. Dense line/space features down to 60 nm have been delineated in this resist. This paper will discuss the lithographic performance of this resist and compare it with that of UV-III CA resist and ZEP 520 non-CA resist.
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Bing Lu, Eric Weisbrod, Pawitter J. S. Mangat, Kevin J. Nordquist, Eric S. Ainley, "Evaluation of a high-performance chemically amplified resist for EUVL mask fabrication", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.504553; https://doi.org/10.1117/12.504553
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