16 June 2003 Evaluation of a high-performance chemically amplified resist for EUVL mask fabrication
Author Affiliations +
In this paper, we report on evaluation of a high e-beam sensitive CA resist, FEP171 for EUVL mask fabrication. This resist exhibits a PEB temperature sensitivity of ~1nm/°C and 8.3 nm (3 σ) CD uniformity across an EUVL mask patterned with 200 nm dense features using a 100 keV e-beam exposure system. This resist also showed a very high resolution and excellent exposure latitude. Dense line/space features down to 60 nm have been delineated in this resist. This paper will discuss the lithographic performance of this resist and compare it with that of UV-III CA resist and ZEP 520 non-CA resist.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bing Lu, Bing Lu, Eric Weisbrod, Eric Weisbrod, Pawitter J. S. Mangat, Pawitter J. S. Mangat, Kevin J. Nordquist, Kevin J. Nordquist, Eric S. Ainley, Eric S. Ainley, } "Evaluation of a high-performance chemically amplified resist for EUVL mask fabrication", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.504553; https://doi.org/10.1117/12.504553

Back to Top