Translator Disclaimer
Paper
16 June 2003 High-resolution x-ray masks for the application of high-aspect-ratio microelectromechanical systems (HARMS)
Author Affiliations +
Abstract
Challenging requirements in optical and BioMEMS application with high aspect ratios of microstructures in access of 20 and smallest structure details of less than 1 μm have motivated this work to irmpove x-ray mask fabrication. Several approaches to pattern an intermediate x-ray mask with the gold absorber thickness of 1.6-2.2μm using a 1μm thick silicon nitride membrane have been explored. E-beam lithography is employed for primary patterning and experimental results show that high energy (100keV) e-beam lithography is a very promising approach. So-called working x-ray mask can be fabricated from intermediate x-ray mask through x-ray lithography. More than 10μm thick PMMA x-ray resist has been coated on the silicon nitride membrane by multi-coating process without crack. First exposure results indicate that adhesion and stability of sub-micrometer structures wiht these heights is critical. In order to overcome these problems a novel approach has been proposed by coating resist on both sides of the silicon nitride membrane and simultaneous patterning of both sides using x-rays. First successful experimental results have been achieved for proving the feasibility.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lin Wang, Yohannes M. Desta, Jost Goettert, and F. Xian "High-resolution x-ray masks for the application of high-aspect-ratio microelectromechanical systems (HARMS)", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.504555
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

X-ray mask fabrication process
Proceedings of SPIE (July 03 1995)
Development of a low cost x ray mask for high...
Proceedings of SPIE (July 20 1998)
X-ray mask fabrication at CXrL
Proceedings of SPIE (June 25 1999)

Back to Top