16 June 2003 Imaging capability of low-energy electron-beam proximity-projection lithography toward the 65/45-nm node
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Abstract
Imaging capabilities of low-energy electron-beam proximity-projection lithography (LEEPL) are discussed focusing mainly on the hole patterns for chemically amplified resist. LEEPL needs a multi-layer process with a resist layer less than 100 nm thick. To achieve the imaging performance of the 65nm node, we optimized intermediate spin-on-glass layer and top-layer resist, which were selected carefully. 80 nm hole patterns were achieved with 10% exposure latitude, and current imaging position and 45 nm node positions were investigated using σQBP. σQBP was improved from 64.5 nm to 48.9 nm.
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Hiroyuki Nakano, Hiroyuki Nakano, Shinichiro Nohdo, Shinichiro Nohdo, Kumiko Oguni, Kumiko Oguni, Tomonori Motohashi, Tomonori Motohashi, Masaki Yoshizawa, Masaki Yoshizawa, Tetsuya Kitagawa, Tetsuya Kitagawa, Shigeru Moriya, Shigeru Moriya, } "Imaging capability of low-energy electron-beam proximity-projection lithography toward the 65/45-nm node", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484429; https://doi.org/10.1117/12.484429
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