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16 June 2003 LPP-based reflectometer for characterization of EUV lithography systems
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Abstract
An EUV reflectometer, based on a laser-produced plasma (LPP) light source, has been developed for characterization of EUV lithography systems. The reflectometer consists of the LPP light source, a prefocusing toroidal mirror, a grating monochromator, a polarizer, a beam intensity monitor, a refocusing toroidal mirror and a sample stage. The LPP light source is driven by a Nd:YAG laser; the laser beam is focused onto a copper tape target. A debris mitigation system that uses a rotating shutter was developed. Higher-orders formthe grating monochromator were suppressed to less than 0.2% of incident beam intensity by total reflection of three grazing incidence mirros. In order to compensate for beam intensity instability, a beam intensity monitor using a grating beamsplitter was installed between the refocusing mirror and the sample. Beam intensity instability can be corrected to less than 0.1% by using the beam intensity monitor.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Miyake, Takeshi Miyachi, Mitsuaki Amemiya, Takayuki Hasegawa, Nobuaki Ogushi, Takeshi Yamamoto, Fumitaro Masaki, and Yutaka Watanabe "LPP-based reflectometer for characterization of EUV lithography systems", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484969
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