LPP-based reflectometer for characterization of EUV lithography systems

Akira Miyake; Takeshi Miyachi; Mitsuaki Amemiya; Takayuki Hasegawa; Nobuaki Ogushi; Takeshi Yamamoto; Fumitaro Masaki; Yutaka Watanabe

doi:10.1117/12.484969

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16 June 2003 LPP-based reflectometer for characterization of EUV lithography systems

Akira Miyake, Takeshi Miyachi, Mitsuaki Amemiya, Takayuki Hasegawa, Nobuaki Ogushi, Takeshi Yamamoto, Fumitaro Masaki, Yutaka Watanabe

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Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484969
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

An EUV reflectometer, based on a laser-produced plasma (LPP) light source, has been developed for characterization of EUV lithography systems. The reflectometer consists of the LPP light source, a prefocusing toroidal mirror, a grating monochromator, a polarizer, a beam intensity monitor, a refocusing toroidal mirror and a sample stage. The LPP light source is driven by a Nd:YAG laser; the laser beam is focused onto a copper tape target. A debris mitigation system that uses a rotating shutter was developed. Higher-orders formthe grating monochromator were suppressed to less than 0.2% of incident beam intensity by total reflection of three grazing incidence mirros. In order to compensate for beam intensity instability, a beam intensity monitor using a grating beamsplitter was installed between the refocusing mirror and the sample. Beam intensity instability can be corrected to less than 0.1% by using the beam intensity monitor.

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Akira Miyake, Takeshi Miyachi, Mitsuaki Amemiya, Takayuki Hasegawa, Nobuaki Ogushi, Takeshi Yamamoto, Fumitaro Masaki, and Yutaka Watanabe "LPP-based reflectometer for characterization of EUV lithography systems", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484969

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