16 June 2003 Masked ion beam lithography and direct structuring on curved surfaces
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We have previously demonstrated (Proc. SPIE Vol. 4688, 595, 2002; JM3 Vol. 2, Nr. 1, 34, 2003) a depth of focus of several millimeters in masked ion beam lithography (MIBL). This work illustrates the use of this capability to pattern concave and convex spherical substrates 25 mm in diameter and 5.5 mm deep. Features as small as 175nm were printed across a convex substrate with 75 keV He+ ions where the mask-to-wafer gap varied from 1 mm on the center to 6.5 mm on the edge. We also demonstrate, for the first time, the fabrication of 800 nm features in a 4 nm thick Cr coating by masked ion beam direct structuring (MIBS), where 45 keV Argon ions sputter the film through a stencil mask. We demonstrate electronic adjustment of the radial beam profile of the incident ion beam to compensate for the continuously changing angle between the beam and the spherical substrate, thus achieving constant exposure dose (for MIBL) or sputtering rate (for MIBS) a 50 × 50 mm2 field.
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Hans Loeschner, Herbert Buschbeck, Martin Ecker, Christoph Horner, Elmar Platzgummer, Gerhard Stengl, Michaela Zeininger, Paul Ruchhoeft, John Charles Wolfe, "Masked ion beam lithography and direct structuring on curved surfaces", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.482716; https://doi.org/10.1117/12.482716

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