16 June 2003 Maskless lithography: a low-energy electron-beam direct writing system with a common CP aperture and the recent progress
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Abstract
In order to realize SoC (System on a Chip) fabrication at low cost with quick-TAT (Turn-Around-Time) we have proposed a maskless lithography (ML2) strategy, a low-energy electron-beam direct writing (LEEBDW) system with a common character projection (CP) aperture. This paper presents a status report on our proof-of-concept (POC) system. We have developed a compact EB column consisting small electrostatic lenses and deflectors. The experimental results for our POC system indicated that the patterns corresponding to 50nm-node logic devices can be obtained with CP exposure at the incident energy of 5 keV. The technique to reduce the raw process time using a SEM function of LEEBDW system is also reported.
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Tetsuro Nakasugi, Tetsuro Nakasugi, Atsushi Ando, Atsushi Ando, Ryoichi Inanami, Ryoichi Inanami, Noriaki Sasaki, Noriaki Sasaki, Takumi Ota, Takumi Ota, Osamu Nagano, Osamu Nagano, Yuuichiro Yamazaki, Yuuichiro Yamazaki, Kazuyoshi Sugihara, Kazuyoshi Sugihara, Ichiro Mori, Ichiro Mori, Motosuke Miyoshi, Motosuke Miyoshi, Katsuya Okumura, Katsuya Okumura, Akira Miura, Akira Miura, } "Maskless lithography: a low-energy electron-beam direct writing system with a common CP aperture and the recent progress", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.483607; https://doi.org/10.1117/12.483607
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