16 June 2003 Performance of beta tool for low-energy electron-beam proximity-projection lithography (LEEPL)
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Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003); doi: 10.1117/12.484422
Event: Microlithography 2003, 2003, Santa Clara, California, United States
The two LEEPL beta-tools were completed in earlier 2002 and have been evaluated for the performance. 50nm CH patterns and 70nm L/S patterns are attained and the CD uniformity of 70nm L/S patterns with 37 shots on a 200mm wafer is under 4nm with the LEEPL beta-tools. In addition, it is proven that the fine tuning deflector can correct a mask and a wafer distortion by giving a minute angle to the electron beam. The mask distortion with respect to orthogonality and magnification is decreased on a wafer by 1/5. By means of this fine tuning deflector, Mix & Match accuracy with any other lithography tools will be better and difficulty of 1X stencil mask fabrication wil be easier. Referring to the data which has been obtained with the evaluation of the LEEPL beta-tools, the first LEEPL production tool dubbed "LEEPL-3000" is under construction to realize the satisfactory ability for 65nm node device fabrication. The shipping of the first LEEPL-3000 is scheduled in earlier 2003 and it is earlier than any other Next Generation Lithography technologies.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Yoshida, Haruo Kasahara, Akira Higuchi, Hiroshi Nozue, Akihiro Endo, Nobuo Shimazu, "Performance of beta tool for low-energy electron-beam proximity-projection lithography (LEEPL)", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484422; https://doi.org/10.1117/12.484422

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