16 June 2003 Supercritical resist dry technique for electron-beam projection lithography (EPL)
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Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003); doi: 10.1117/12.484990
Event: Microlithography 2003, 2003, Santa Clara, California, United States
A single-layer resist process for a technology nodes at or below 65nm utilizing a novel supercritical dry technique and Electron-beam Projection Lithography (EPL) technology is discussed. EPL is inhernelty advantageous in imaging sub-65nm geometries with high aspect ratios. Pattern collapse of these high aspect ratio (resist) structures, however, is a critical and limiting issue. By employing our novel supercritical carbon dioxide (SCCO2) dry technique, 70nm and 60nm lines and spaces patterns with a resist thickness of 250nm, whose aspect ratio is 3.5 and 4.2 respectively, have been successfully demonstrated without resist pattern collapse.
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George Petricich, Kohei Suzuki, Jun Munemasa, Tetsuya Yoshikawa, Nobuyuki Kawakami, Sumito Shimizu, Manabu Watanabe, "Supercritical resist dry technique for electron-beam projection lithography (EPL)", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484990; https://doi.org/10.1117/12.484990



Single crystal X-ray diffraction

Photoresist processing

Plasma etching


Carbon dioxide

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