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16 June 2003Ultra fast ion shutter employing a laser-produced plasma
1National Institute of Advanced Industrial Science and Technology (Japan) 2Japan Society for the Promotion of Science (Japan) 3National Institute of Advanced Industrieal Science and Technology (Japan) 4Association of Super-Advanced Electronics Technologies (Japan)
In order to protect a multilayer mirror from sputtering or ion implantation, high-energy ions ejected from EUV source plasma are to be blocked. We propose use of a laser-produced plasma as an ultra-fast shutter. Ion signal form an ion-source plasma dropped abruptly by two orders of magnitude to a noise level after the shutter plasma generation. The stopping effect for the high-energy ions was observed to reduce as the distance of shutter plasma expansion increases, but the suppression of ions below detection level was observed up to 10 mm. We concluded that reduction of ion signal was caused by in-take of the source plasma flow into the stream of the shutter plasma.