Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography

Young-Sik Kim; Tae Jun You; Jin-Soo Kim; Seok-Kyun Kim; Keun-Kyu Kong; Young-Deuk Kim; HyeongSoo Kim

doi:10.1117/12.485009

2 June 2003 Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography

Young-Sik Kim, Tae Jun You, Jin-Soo Kim, Seok-Kyun Kim, Keun-Kyu Kong, Young-Deuk Kim, HyeongSoo Kim

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.485009
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Most chip makers want KrF lithography is extended below sub 100nm lithography due to cost and process stability, even though ArF lithography has been growing and its performance is enough to apply to 100nm node. But process control of KrF lithography will become difficult at sub 100nm node era because of difficulty of mask making, accuracy of optical proximity correction (OPC), lens effects caused by strong off-axis illumination, need more tool accuracies than ever, and so on.

Citation Download Citation

Young-Sik Kim, Tae Jun You, Jin-Soo Kim, Seok-Kyun Kim, Keun-Kyu Kong, Young-Deuk Kim, and HyeongSoo Kim "Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.485009

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