2 June 2003 Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography
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Abstract
Most chip makers want KrF lithography is extended below sub 100nm lithography due to cost and process stability, even though ArF lithography has been growing and its performance is enough to apply to 100nm node. But process control of KrF lithography will become difficult at sub 100nm node era because of difficulty of mask making, accuracy of optical proximity correction (OPC), lens effects caused by strong off-axis illumination, need more tool accuracies than ever, and so on.
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Young-Sik Kim, Young-Sik Kim, Tae Jun You, Tae Jun You, Jin-Soo Kim, Jin-Soo Kim, Seok-Kyun Kim, Seok-Kyun Kim, Keun-Kyu Kong, Keun-Kyu Kong, Young-Deuk Kim, Young-Deuk Kim, HyeongSoo Kim, HyeongSoo Kim, } "Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.485009; https://doi.org/10.1117/12.485009
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