2 June 2003 Application of scatterometry for CD and profile metrology in 193-nm lithography process development
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Abstract
ArF resist lines are tested using scatterometry to study the CD correlation with CDSEM, profile variation caused by baking temperature and pattern environment, as well as the evaluation of optical proximity effect (OPE). Results show reasonable profiles variation predicted by scatterometry spectra from different baking temperatures. Other good matches are the predicted resist line profiles from dark-field and clear-field pattern environment and various line-pitch ratios. They are found to be very similar with the images from the cross-section SEM. On the other hand, the CD linearity and OPE are also found with good matches between scatterometry CD and SEM CD. However, the maximum pitch size tested for OPE is 0.6 μm. More sparse patterns aer believed to have lower sensitivity caused by the weak characteristics spectrum detected. The spectrum sensitivity is another important topic in this paper. The CD and pitch information is contained across the entire spectrum while small profile variations, like t-top and footing, are predicted in the shorter wavelength region. To predict accurate resist profile for small CD, the usage of the shorter wavelength spectrum is inevitable.
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Li-Jui Chen, Li-Jui Chen, Chih-Ming Ke, Chih-Ming Ke, Shinn Sheng Yu, Shinn Sheng Yu, Tsai-Sheng Gau, Tsai-Sheng Gau, Pei-Hung Chen, Pei-Hung Chen, Yao Ching Ku, Yao Ching Ku, Burn Jeng Lin, Burn Jeng Lin, Dan Engelhard, Dan Engelhard, Dave Hetzer, Dave Hetzer, Jason Y.H. Yang, Jason Y.H. Yang, Kelly A. Barry, Kelly A. Barry, Lip Yap, Lip Yap, Wenge Yang, Wenge Yang, } "Application of scatterometry for CD and profile metrology in 193-nm lithography process development", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483692; https://doi.org/10.1117/12.483692
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