CD-SEM image acquisition effects on 193-nm resist line slimming

Neal T. Sullivan; Martin E. Mastovich; Scott Bowdoin; Robert Brandom

doi:10.1117/12.487604

2 June 2003 CD-SEM image acquisition effects on 193-nm resists line slimming

Neal T. Sullivan, Martin E. Mastovich, Scott Bowdoin, Robert Brandom

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.487604
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

ArF resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193nm resists. Previous studies have demonstrated the primary effect of electron landing energy on ArF resist line slimming; this work examines the influence of acquisition time, beam blanking, probe current and measurement magnification. This work will demonstrate, in concurrence with other research, that reducing landing energy remains the most effective method for minimizing line slimming of ArF resist under electron beam exposure. However, the other parameters studied can also affect the magnitude of line slimming. This becomes especially important for line edge roughness (LER) measurements which require a greater total dose be imparted to the sample to maintain measurement precision. Control over all acquisition parameters is essential to achieve accurate and repeatable LER measurements.

Citation Download Citation

Neal T. Sullivan, Martin E. Mastovich, Scott Bowdoin, and Robert Brandom "CD-SEM image acquisition effects on 193-nm resists line slimming", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.487604

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