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2 June 2003 Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source
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Abstract
New configuration is presented for ultra-fast at-wavelength inspection of defects on multilayer mask blanks. Key ideas are detecting defects in a high NA dark-field observation by using a Schwarzschild objective, sub-micron resolution 2D imaging of mask surface on a detector, and large etendue illumination by using a laser-plasma source. Expected time for inspecting a whole mask is shorter than 2 hours.
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Toshihisa Tomie, Tsuneo Terasawa, Yoshihiro Tezuka, and Masaaki Ito "Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.482811
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