Electrical linewidth metrology for systematic CD variation characterization and causal analysis

Jason P. Cain; Costas J. Spanos

doi:10.1117/12.483664

2 June 2003 Electrical linewidth metrology for systematic CD variation characterization and causal analysis

Jason P. Cain, Costas J. Spanos

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.483664
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Control of critical dimension (CD) variation is of extreme importance in modern semiconductor manufacturing processes. To be controlled, the nature of CD variation must be understood. This paper outlines a method for characterizing systematic spatial variation by means of dense electrical linewidth measurements, including actual sample data. In addition, since exhaustive sampling is prohibitively expensive for routine use, a method is discussed for finding an optimum economical sampling plan and using this plan to track systematic CD variation over time.

Citation Download Citation

Jason P. Cain and Costas J. Spanos "Electrical linewidth metrology for systematic CD variation characterization and causal analysis", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.483664

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available